bsp179 sipmos ? small-signal-transistor features ? n-channel ? depletion mode ? d v /d t rated ? available with v gs(th) indicator on reel ? pb-free lead plating; rohs compliant ? qualified according to aec q101 ? halogen-free according to iec61249-2-21 9.18 13.14 24.96 102.48 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25?c 0.21 a t a =70?c 0.17 pulsed drain current i d,pulse t a =25?c 0.83 reverse diode d v /d t d v /d t i d =0.21?a, v ds =20?v, d i /d t =200?a/s, t j,max =150?c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per jesd-a114-hbm 1a (>250v, <500v) power dissipation p tot t a =25?c 1.8 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 1) see table on next page and diagram 11 value v ds 400 v r ds(on),max 24 w i dss,min 40 ma product summary pg - sot223 type package tape and reel marking halogen - packaging bsp179 pg - sot223 h6327: 1000 pcs/reel bsp179 yes non dry bsp179 pg - sot223 h6906: 1000 pcs/reel sorted in v gs(th) bands 1) bsp179 yes non dry rev. 2.0 page 1 2015-06-23
bsp179 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - soldering point (pin 4) r thjs - - 25 k/w smd version, device on pcb r thja minimal footprint - - 115 6 cm 2 cooling area 2) - - 70 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =-3?v, i d =250?a 400 - - v gate threshold voltage v gs(th) v ds =3?v, i d =94?a -2.1 -1.4 -1 drain-source cutoff current i d(off) v ds =400?v, v gs =-3?v, t j =25?c - - 0.1 a v ds =400?v, v gs =-3?v, t j =150?c - - 10 gate-source leakage current i gss v gs =20?v, v ds =0?v - - 100 na on-state drain current i dss v gs =0?v, v ds =10?v 40 - - ma drain-source on-state resistance r ds(on) v gs =0?v, i d =0.01?a - 18 24 w v gs =10?v, i d =0.21?a - 13 18 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.17?a 0.21 - s threshold voltage v gs(th) sorted in bands 3) j v gs(th) v ds =3?v, i d =94?a -1.2 - -1 v k -1.35 - -1.15 l -1.5 - -1.30 m -1.65 - -1.45 n -1.8 - -1.6 drain connection. pcb is vertical in still air. 3) each reel contains transistors out of one band whose identifying letter is printed on the reel label. a specific band cannot be ordered separately. values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (single layer, 70 m thick) copper area for rev. 2.0 page 2 2015-06-23
bsp179 parameter symbol conditions unit min. typ. max. dynamic characteristics 4) input capacitance c iss - 102 135 pf output capacitance c oss - 10 14 reverse transfer capacitance c rss - 6 9 turn-on delay time t d(on) - 6.1 9.2 ns rise time t r - 8.8 13.1 turn-off delay time t d(off) - 17 25 fall time t f - 68 102 gate charge characteristics 4) gate to source charge q gs - 0.43 0.65 nc gate to drain charge q gd - 2.2 3.3 gate charge total q g - 4.5 6.8 gate plateau voltage v plateau - 0.49 - v reverse diode diode continous forward current i s - - 0.21 a diode pulse current i s,pulse - - 0.83 diode forward voltage v sd v gs =-3?v, i f =0.21?a, t j =25?c - 0.84 1.1 v reverse recovery time 4) t rr - 111 167 ns reverse recovery charge 4) q rr - 390 584 nc 4) defined by design. not subjected to production test v r =200?v, i f =0.21?a, d i f /d t =100?a/s t a =25?c values v gs =-3?v, v ds =25?v, f =1?mhz v dd =200?v, v gs =-3...5?v, i d =0.2?a, r g,ext =25? w v dd =400?v, i d =0.21?a, v gs =-3?to?5?v rev. 2.0 page 3 2015-06-23
bsp179 1 power dissipation 2 drain current p tot) =f( t a ) i d =f( t a ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t a =25 c; d =0 z thja =f( t p ) parameter: t p parameter: d = t p / t 10 s 100 s 1 ms 10 ms dc 10 0 10 1 10 2 10 3 10 - 3 10 - 2 10 - 1 10 0 10 1 i d [a] v ds [v] limited by on - state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 - 4 10 - 3 10 - 2 10 - 1 10 0 10 1 10 2 10 0 10 1 10 2 z thja [k/w] t p [s] 0 0,5 1 1,5 2 0 40 80 120 160 p tot [w] t a [ c] 0 0,05 0,1 0,15 0,2 0,25 0 40 80 120 160 i d [a] t a [ c] rev. 2.0 page 4 2015-06-23
bsp179 5 typ. output characteristics 6 typ. drain-source on resistance i d =f(v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c - 0.2 v - 0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 10 20 30 40 0 0,05 0,1 0,15 0,2 0,25 r ds(on) [ w ] i d [a] 0 0,05 0,1 0,15 0,2 0,25 -2 -1 0 1 i d [a] v gs [v] 0 0,05 0,1 0,15 0,2 0,00 0,04 0,08 0,12 g fs [s] i d [a] - 0.2 v - 0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 0,1 0,2 0,3 0 2 4 6 8 10 i d [a] v ds [v] rev. 2.0 page 5 2015-06-23
bsp179 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =0.01 a; v gs =0 v v gs(th) =f( t j ); v ds =3 v; i d =94 a parameter: i d 11 threshold voltage bands 12 typ. capacitances i d =f( v gs ); v ds =3 v; t j =25 c c =f( v ds ); v gs =-3 v; f =1 mhz 94 a j k l m n 0,01 0,1 1 10 -2 -1,5 -1 -0,5 i d [ma] v gs [v] typ 98 % 0 10 20 30 40 50 60 -60 -20 20 60 100 140 r ds(on) [ w ] t j [ c] typ 98 % 2 % -3 -2,5 -2 -1,5 -1 -0,5 0 -60 -20 20 60 100 140 v gs(th) [v] t j [ c] ciss coss crss 10 0 10 1 10 2 10 3 0 10 20 30 c [pf] v ds [v] rev. 2.0 page 6 2015-06-23
bsp179 13 forward characteristics of reverse diode 15 typ. gate charge i f =f(v sd ) v gs =f( q gate ); i d =0.21 a pulsed parameter: t j parameter: v dd 16 drain-source breakdown voltage v br(dss) =f( t j ); i d =250 a 300 340 380 420 460 500 -60 -20 20 60 100 140 v br(dss) [v] t j [ c] 0.2 vds(max) 0.5 vds(max) 0.8 vds(max) -3 -2 -1 0 1 2 3 4 5 0 0,4 0,8 1,2 1,6 2 2,4 2,8 3,2 3,6 4 v gs [v] q gate [nc] 25 c 150 c 25 c, 98% 25 c 98% 150 c 98% 0,01 0,1 1 0 0,5 1 1,5 2 i f [a] v sd [v] rev. 2.0 page 7 2015-06-23
bsp179 package outline: 9.18 13.14 24.96 102.48 footprint: packaging: v ds =3?v, i d =94?a 167 584 dimensions in mm rev. 2.0 page 8 2015-06-23
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